A self-powered and sensitive terahertz photodetection based on PdSe2

With the rapid development of terahertz technology, terahertz detectors are expected to play a key role in diverse areas such as homeland security and imaging, materials diagnostics, biology, medical sciences, and communication. Whereas self-powered, rapid response, and room temperature terahertz photodetectors are confronted with huge challenges. Here, we report a novel rapid response and self-powered terahertz photothermoelectronic (PTE) photodetector based on a low-dimensional material: palladium selenide (PdSe₂). An order of magnitude performance enhancement was observed in photodetection based on PdSe₂/graphene heterojunction that resulted from the integration of graphene and enhanced the Seebeck effect. Under 0.1-THz and 0.3-THz irradiations, the device displays a stable and repeatable photoresponse at room temperature without bias. Furthermore, rapid rise (5.0 μs) and decay (5.4 μs) times are recorded under 0.1-THz irradiation. Our results demonstrate the promising prospect of the detector based on PdSe₂ in terms of air-stable, suitable sensitivity and speed, which may have great application in terahertz detection.     

基于PdSe2/GaAs异质结的高灵敏近红外光伏型探测器的制备和图像传感的应用

本文制备了一种基于PdSe₂/GaAs异质结的高灵敏近红外光电探测器，该探测器是通过将多层PdSe₂薄膜转移到平面GaAs上制成的. 所制备的PdSe₂/GaAs异质结器件在808 nm光照下表现出明显的光伏特性，这表明近红外光电探测器可以用作自驱动器件. 进一步的器件分析表明，这种杂化异质结在零偏电压和808 nm光照下具有1.16×10⁵的高开关比. 光电探测器的响应度和比探测度分别约为171.34 mA/W和2.36×10¹¹ Jones. 而且，该器件显示出优异的稳定性和可靠的重复性. 在空气中2个月后，近红外光电探测器的光电特性几乎没有下降，这归因于PdSe₂的良好稳定性. 最后，基于PdSe₂/GaAs的异质结器件还可以用作近红外光传感器.     

3D-Printed Bionic Ear for Sound Identification and Localization Based on In Situ Polling of PVDF-TrFE Film

Bionic acoustic sensors are an indispensable part to realize interactions between humans and robotics. In this work, a PVDF-TrFE sensor array with multiple active pixels combined with a 3D-printed bionic ear model is prepared, which can accurately detect sounds with different frequencies and locate the sound source from different directions. The PVDF-TrFE sensor array can clearly identify the sound within 25 cm, and the error between the accepted sound frequency and the original input frequency is less than 0.001%. Through the algorithm analysis of the input signal, the location of the sound source can be immediately analyzed. Compared with other acoustic sensors, this sensor has the advantages of being self-powered, small size, and high flexibility, which holds great potential for bionic applications.     

Effect of surface oxygen vacancy defects on the performance of ZnO quantum dots ultraviolet photodetector

The slower response speed is the main problem in the application of ZnO quantum dots (QDs) photodetector, which has been commonly attributed to the presence of excess oxygen vacancy defects and oxygen adsorption/desorption processes. However, the detailed mechanism is still not very clear. Herein, the properties of ZnO QDs and their photodetectors with different amounts of oxygen vacancy (V_O) defects controlled by hydrogen peroxide (H₂O₂) solution treatment have been investigated. After H₂O₂ solution treatment, V_O concentration of ZnO QDs decreased. The H₂O₂ solution-treated device has a higher photocurrent and a lower dark current. Meanwhile, with the increase in V_O concentration of ZnO QDs, the response speed of the device has been improved due to the increase of oxygen adsorption/desorption rate. More interestingly, the response speed of the device became less sensitive to temperature and oxygen concentration with the increase of V_O defects. The findings in this work clarify that the surface V_O defects of ZnO QDs could enhance the photoresponse speed, which is helpful for sensor designing.     

Simulation of near-infrared photodiode detectors based on β-FeSi_2/4H-SiC heterojunctions

In this paper,we propose a near-infrared p-type β-FeSi2/n-type 4H-SiC heterojunction photodetector with semiconducting silicide(β-FeSi2) as the active region for the first time.The optoelectronic characteristics of the photodetector are simulated using a commercial simulator at room temperature.The results show that the photodetector has a good rectifying character and a good response to near-infrared light.Interface states should be minimized to obtain a lower reverse leakage current.The response spectrum of the β-FeSi2/4H-SiC detector,which consists of a p-type β-FeSi2 absorption layer with a doping concentration of 1×1015cm-3 and a thickness of 2.5 μm,has a peak of 755 mA/W at 1.42 μm.The illumination of the SiC side obtains a higher responsivity than that of the β-FeSi2 side.The results illustrate that the β-FeSi2/4H-SiC heterojunction can be used as a near-infrared photodetector compatible with near-infrared optically-activated SiC-based power switching devices.     

单层2H-MoTe2光电效应的理论研究

材料的禁带宽度是影响光电探测器探测范围的重要因素。单层2H-MoTe₂因具有合适的禁带宽度引起了科研人员广泛的研究兴趣。本文基于非平衡态格林函数-密度泛函理论,采用第一性原理方法,研究了单层2H-MoTe₂的光电效应。结果表明:在线性偏振光照射下,MoTe₂产生的光电流函数与唯象理论相吻合;在光子能量范围1.6~1.8 eV (690~770 nm),对应于红光,能产生较大的光电流。利用能带结构和态密度分析了产生较大光电流的原因主要来自第一布里渊区S点的电子受激跃迁。同时发现在锯齿型方向偏压为0.8 V时,光电流达到峰值;然而在扶手椅型方向偏压为0.4 V时,光电流就达到峰值。这些计算结果可用于指导基于MoTe₂光电探测器的设计,尤其是红外光电探测器的设计。     

Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers – Grown on GaAs,using an interfacial misfit array,and on native GaSb

InAsSb-based nBn photodetectors were fabricated on GaAs, using the interfacial misfit (IMF) array growth mode, and on native GaSb. At −0.1 V operating bias, 200 K dark current densities of 1.4 × 10⁻⁵ A cm⁻² (on GaAs) and 4.8 × 10⁻⁶ A cm⁻² (on GaSb) were measured. At the same temperature, specific detectivity (D^*) figures of 1.2 × 10¹⁰ Jones (on GaAs) and 7.2 × 10¹⁰ Jones (on GaSb) were calculated. Arrhenius plots of the dark current densities yielded activation energies of 0.37 eV (on GaAs) and 0.42 eV (on GaSb). These values are close to the 4 K bandgap of the absorption layers (0.32–0.35 eV) indicating diffusion limited dark currents and small valence band offsets. Significantly, these devices could be used for mid-infrared focal plane arrays operating within the temperature range of cost-effective thermoelectric coolers.     

化学气相沉积法制备InSe纳米片及其近红外光探测性能

采用化学气相沉积法在云母衬底上制备了二维InSe纳米片, 研究了生长温度对二维InSe纳米片晶相、 形貌、 尺寸及厚度的影响. 构筑了基于二维InSe纳米片的光探测器并研究了其光探测性能, 结果表明, 在808 nm的近红外光辐照下, 其光响应度为1.5 A/W, 外量子效率为230%, 可探测度为3.1×10 ⁸ Jones(1 Jones=1 cm·Hz ^1/2·W ^-1), 上升和衰减时间分别为0.5 和0.8 s.     

GaN基p-i-n型雪崩探测器的制备与表征

制备和表征了p-i-n型的GaN基雪崩探测器.器件在-5V下的暗电流约为0.05 nA,-20 V下的暗电流小于0.5 nA.响应增益-偏压曲线显示,可重复的雪崩增益起始于80 V附近,在85 V左右增益达到最大为120,表明所制备的器件具有较好的质量.C-V测量用来确定载流子的分布和耗尽信息,结果显示,P型层在15 ...     

MSM结构Mg0.2Zn0.8O可见盲光电探测器

采用射频磁控溅射,通过传统的紫外曝光和湿法腐蚀的方法,制备了不同电极间距的金属-半导体-金属(MSM)结构Mg0.2Zn0.8O可见盲光电探测器.研究了器件的暗电流和响应度随电极间距的变化关系,当施加的电压没有达到贯穿电压的时候,暗电流和响应度均随着电极间距的增加而减小,并对其具体的机制进行了研究.